? 2018 littelfuse, inc. specifcations are subject to change without notice. revised: 03/02/18 rohs LSIC1MO120E0120 1200 v n-channel, enhancement-mode sic mosfet features applications ? optimized for high- frequency, high-effciency applications ? extremely low gate charge and output capacitance ? low gate resistance for high-frequency switching ? normally-off operation at all temperatures ? ultra-low on-resistance ? high-frequency applications ? solar inverters ? switch mode power supplies ? ups ? motor drives ? high voltage dc/dc converters ? battery chargers ? induction heating circuit diagram to-247-3l 2 1 3 * * body diode product summary characteristics value unit v ds 1200 v typical r ds(on) 120 m i d ( t c 100 c) 18 a ? littelfuse rohs logo = rohs conform ? littelfuse hf logo = halogen free ? littelfuse pb-free logo = pb-free lead plating environmental rohs pb pb sic mosfet LSIC1MO120E0120, 1200 v, 120 mohm, to-247-3l
? 2018 littelfuse, inc. specifcations are subject to change without notice. revised: 03/02/18 thermal characteristics maximum ratings characteristics symbol conditions value unit continuous drain current i d v gs = 20 v, t c = 25 c 27 a v gs = 20 v, t c = 100 c 18 pulsed drain current 1 i d(pulse) t c = 25 c 54 a power dissipation p d t c = 25 c, t j = 150 c 139 w operating junction temperature t j -55 to 150 c gate-source voltage v gs,max absolute maximum values -6 to 22 v v gs,op,tr transient, <1% duty cycle -10 to 25 v gs,op recommended dc operating values -5 to 20 storage temperature t stg - -55 to 150 c lead temperature for soldering t sold - 260 c mounting torque m d m3 or 6-32 screw 0.6 nm 5.3 in-lb footnote 1: pulse width limited by t j,max characteristics symbol value unit maximum thermal resistance, junction-to-case r th,jc,max 0.9 c/w maximum thermal resistance, junction-to-ambient r th,ja,max 40 c/w electrical characteristics (t j = 25 c unless otherwise specifed) characteristics symbol conditions min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 1200 - - v zero gate voltage drain current i dss v ds = 1200 v, v gs = 0 v - 1 100 a v ds = 1200 v, v gs = 0 v, t j = 150 c - 2 - gate leakage current i gss,f v gs = 22 v, v ds = 0 v - - 100 na i gss,r v gs = -6 v, v ds = 0 v - - 100 drain-source on-state resistance r ds(on) i d = 14 a, v gs = 20 v - 120 150 m i d = 14 a, v gs = 20 v, t j = 150 c - 158 - gate threshold voltage v gs,(th) v ds = v gs , i d = 7 ma 1. 8 2.8 4.0 v v ds = v gs , i d = 7 ma, t j = 150 c - 1. 9 - gate resistance r g resonance method, drain-source shorted - 0.85 - sic mosfet LSIC1MO120E0120, 1200 v, 120 mohm, to-247-3l
? 2018 littelfuse, inc. specifcations are subject to change without notice. revised: 03/02/18 electrical characteristics (t j = 25 c unless otherwise specifed) characteristics symbol conditions value unit min typ max dynamic characteristics turn-on switching energy e on v dd = 800 v, i d = 14 a, v gs = -5/+20 v, r g,ext = 2 , l = 1.4mh, fwd = lsic2sd120a10 - 111 - j turn-off switching energy e off - 68 - total per-cycle switching energy e ts - 179 - input capacitance c iss v dd = 800 v, v gs = 0 v, f = 1 mhz, v ac = 25 mv - 112 5 - pf output capacitance c oss - 53 - reverse transfer capacitance c rss - 8 - c oss stored energy e oss - 17 - j total gate charge q g v dd = 800 v, i d = 14 a, v gs = -5/+20 v - 80 - nc gate-source charge q gs - 20 - gate-drain charge q gd - 28 - turn-on delay time t d(on) v dd = 800 v, v gs = -5/+20 v, i d = 14 a, r g,ext = 2 , r l = 56 , timing relative to v ds - 12 - ns rise time t r - 7 - turn-off delay time t d(off) - 16 - fall time t f - 10 - reverse diode characteristics characteristics symbol conditions value unit min typ max diode forward voltage v sd i s = 7 a, v gs = 0 v - 3.8 - v i s = 7 a, v gs = 0 v, t j = 150 c - 3.4 - continuous diode forward current i s v gs = 0 v, t c = 25 c - - 26 a peak diode forward current 1 i sp - - 54 footnote 1: pulse width limited by t j,max sic mosfet LSIC1MO120E0120, 1200 v, 120 mohm, to-247-3l
? 2018 littelfuse, inc. specifcations are subject to change without notice. revised: 03/02/18 0 20 40 60 80 100 120 140 160 -75 -25 25 75 12 51 75 ) w ( n o i t a p i s s i d r e w o p m u m i x a m case te mp erature, t c ( c) figure 2: transfer characteristics ( v ds = 10 v ) figure 3: output characteristics ( t j = 25 c ) figure 1: maximum power dissipation ( t j = 150 c ) -55 c 25 c 150 c 0 10 20 30 40 50 60 05 10 15 20 drain current, i d (a ) gate-source vo ltage, v gs (v ) figure 4: output characteristics ( t j = 150 c ) 10 v 12 v 14 v 16 v 18 v 20 v (p ul se widt h < 400 s) 0 10 20 30 40 50 0246 81 0 drain current, i d (a ) drain-source vo ltage, v ds (v ) 10 v 12 v 14 v 16 v 18 v 20 v (p ul se widt h < 400 s) 0 10 20 30 40 50 02468 10 drain current, i d (a ) drain-source vo ltage, v ds (v ) figure 6: reverse conduction characteristics ( t j = 25 c ) -5 v 0 v 5 v 10 v 15 v 20 v 0 10 20 30 40 50 0 2 4 6 8 rev erse current, i s (a ) rev erse vo ltage, v sd (v ) figure 5: output characteristics (t j = -55 c) 10 v 12 v 14 v 16 v 18 v 20 v (p ul se widt h < 400 s) 0 10 20 30 40 50 0246 81 0 drain current, i d (a ) drain-source vo ltage, v ds (v ) sic mosfet LSIC1MO120E0120, 1200 v, 120 mohm, to-247-3l
? 2018 littelfuse, inc. specifcations are subject to change without notice. revised: 03/02/18 figure 7: reverse conduction characteristics (t j = 150 c) figure 8: reverse conduction characteristics (t j = -55 c) figure 9: transient thermal impedance figure 10: safe operating area (t c = 25 c) figure 11: normalized on-resistance vs. drain current figure 12: normalized on-resistance -5 v 0 v 5 v 10 v 15 v 20 v 0 10 20 30 40 50 0 2 4 6 8 rev er se cu rre nt , i s (a ) reve rs e voltage, v sd (v ) 7 7 7 7 7 7 reve rs e voltage, v sd (v ) reve rs e cu rre nt , i s (a ) drain current, i d (a ) drain-source vo ltage, v ds (v ) t t n t % $ 4 j o h m f 1 v m t f 0. 5 0. 3 0. 1 0.05 0.02 0.01 single puls e 10 10 10 10 10 10 10 -6 -5 -4 -3 -2 -1 0 10 10 10 10 -3 -2 -1 0 z , e c n a d e p m i l a m r e h t t n e i s n a r t th,j c (nor malize d to r th,j c ) pu lse wi dth (s ) -55 c 25 c 150 c (v gs = 20 v) 0 0.5 1 1.5 2 2.5 01 02 03 04 05 0 normalized on-resistance, r ds(on) drain current, i d (a ) (v gs = 20 v, i d = 14 a) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 02 55 07 51 00 1251 50 175 normalized on-resistance, r ds(on) junction te mp erature, t j ( c) sic mosfet LSIC1MO120E0120, 1200 v, 120 mohm, to-247-3l
? 2018 littelfuse, inc. specifcations are subject to change without notice. revised: 03/02/18 figure 13: threshold voltage figure 14: drain-source blocking voltage figure 15: junction capacitances figure 16: junction capacitances figure 17: c oss stored energy e oss figure 18: gate charge (i d = 7 ma ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -75 -50 -25 02 55 07 51 00 1251 50 175 thr eshold vo ltage, v gs(t h) (v ) junction te mp erature, t j ( c) (i d = 250 a ) 0.96 0.97 0.98 0.99 1 1.01 1.02 1.03 1.04 -75 -50 -25 02 55 07 51 00 1251 50 175 norm alized blocking voltage, v (br)ds s (v) junction te mp erature, t j ( c) c c c is s os s rs s (f = 1 mhz) 1 10 100 1000 1000 0 02 00 4006 00 8001 000 capacitance (pf) drain vo ltage, v ds (v ) c c c is s os s rs s (f = 1 mhz) 1 10 100 1000 1000 0 05 01 00 1502 00 capacitance (pf) drain vo ltage, v ds (v ) 0 5 10 15 20 25 02 00 4006 00 8001 000 st or ed en ergy , e os s (j) drain vo ltage, v ds (v ) (v dd = 800 v, i d = 14 a) -5 0 5 10 15 20 01 02 03 04 05 06 07 08 09 0 gate-source vo ltage, v gs (v ) gate charge, q g (nc) sic mosfet LSIC1MO120E0120, 1200 v, 120 mohm, to-247-3l
? 2018 littelfuse, inc. specifcations are subject to change without notice. revised: 03/02/18 package dimensions to-247-3l r0.93 5.44 5.44 2.46 recommended hole pattern layout unit: mm e e1 a a2 d2 d1 ?p ?p1 e2/2 e2 q s c a1 d l l1 b2 (2x) e b4 b (3x) e optional symbol millimeters min nom max a 4.80 5.03 5.20 a1 2.25 2.38 2.54 a2 1.85 1.98 2.11 b 0.99 - 1.40 b2 1.65 - 2.39 b4 2.59 - 3.43 c 0.38 0.64 0.89 d 20.80 20.96 21.34 d1 13.50 - - d2 0.51 1. 19 1.35 e 5.44 bsc e 15.75 15.90 16.13 e1 13.06 14.02 14.15 e2 4.19 4.32 4.83 l 19.81 20.19 20.57 l1 3.81 4.19 4.45 ?p 3.55 3.61 3.66 ?p1 7.06 7. 1 9 7.32 q 5.49 5.61 6.20 s 6.05 6.17 6.30 notes: 1. dimensions are in millimeters 2. dimension d, e do not include mold fash. mold fash shall not exceed 0.127 mm per side measured at outer most extreme of plastic body. 3.? p to have a maximum draft angle of 38.1 mm to the top of the part with a maximum hole diameter of 3.912 mm. figure 19: switching energy vs. drain current figure 20: switching energy vs. gate resistance e on e of f e ts v dd = 800 v r g, ex t = 2 $ v gs = -5/+20 v fw d = lsic2sd120a1 0 l = 1.4 mh t j = 25 c 0 100 200 300 400 500 600 700 01 02 03 04 0 switch ing en ergy (j) drain current, i d (a ) e on e of f e ts v dd = 800 v i d = 14 a v gs = -5/+20 v fw d = lsic2sd120a1 0 l = 1.4 mh t j = 25 c 0 50 100 150 200 250 300 350 400 450 0246 81 01 2 switch ing en ergy (j) extern al gate resistance, r g, ext ( $ ) sic mosfet LSIC1MO120E0120, 1200 v, 120 mohm, to-247-3l
? 2018 littelfuse, inc. specifcations are subject to change without notice. revised: 03/02/18 packing options part number marking packing mode m.o.q LSIC1MO120E0120 sic1mo120e0120 tube 450 part numbering and marking system sic 1 mo e = to-247-3l yy ww e zzzzzz-zz 120 0120 sic1mo120e0120 yywwe zzzzzz-zz l f = sic = mosfet = voltage rating (1200 v) = gen1 = r ds(on) (120 mohm) = w eek = s pecial code = lot number = year packing speci cation to-247-3l f a ; f ; ? f ; f f f f f f a note: 1. all pin plug holes are considered critical dimension 2. tolerance is to be 0.010 unless otherwise specified 3. dimension are in inch (and millimeters) . ? a a ; f ; ? ? f ; f f f f f f f disclaimer notce - litelfuse products are not designed for, and shall not be used for, any purpose (including, without limitaton, automotve, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applicatons, devices intended for surgical implant into the body, or any other applicaton in which the failure or lack of desired operaton of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable litelfuse product documentaton. warrantes granted by litelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable litelfuse documentaton. litelfuse shall not be liable for any claims or damages arising out of products used in applicatons not expressly intended by litelfuse as set forth in applicable litelfuse documentaton. the sale and use of litelfuse products is subject to litelfuse terms and conditons of sale, unless otherwise agreed by litelfuse. informaton furnished is believed to be accurate and reliable. however, users should independently evaluate the suitability of and test each product selected for their own applicatons. litelfuse products are not designed for, and may not be used in, all applicatons. read complete disclaimer notce at www.litelfuse.com/disclaimer-electronics. sic mosfet LSIC1MO120E0120, 1200 v, 120 mohm, to-247-3l
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